Abstract
To understand the direct correlation between photodarkening (PD) and photoinduced defect creation (PDC) observed in amorphous chalcogenides, in situ simultaneous measurements of PD and photocurrent (PC) have been performed on amorphous As2Se3 films. The time evolution of PD and PDC during light excitations are empirically described by a stretched exponential function; 1 − exp[−(t/τ) β ], where τ is the effective response time and β the dispersion parameter. The value of τ for the PDC is very much smaller than that for the PD, suggesting that there is no direct correlation between the two.
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