Abstract
Abstract It is found in this study that electron tunneling from the conduction band in the semiconductor to the metal tip is possible if the electrode potential of the semiconductor is negative with respect to the flat band potential. The result clearly reveals the role of band bending in semiconductors for electron tunneling at the semiconductor/liquid interface.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
