In situ, real-time RBS measurement of solid state reaction in thin films

Abstract

The applicability of in situ, real-time RBS is demonstrated by characterizing the growth of thin Pd 2Si films on Si 〈1 1 1〉 substrates using isothermal as well as non-isothermal annealing. In contrast to the currently fashionable in situ ramped resistance technique, it is possible to extract the activation energy from a single run with a constant heating rate. The results, which are in excellent agreement with the literature, will be compared for isothermal annealing, fitting an appropriate model for the growth process to data from a single run and a Kissinger-like analysis with different ramp rates. In situ, real-time RBS was also used to study marker motion during CrSi 2 formation in the Si 〈1 0 0〉 /Pd 2Si/Cr system. It is possible to distinguish between the following mechanisms: (1) CrSi 2 formation via dissociation of the Pd 2Si at the Pd 2Si/Cr interface and subsequent reaction of Pd to form Pd 2Si at the Si/Pd 2Si interface and (2) CrSi 2 formation by diffusion of Si from the substrate through the Pd 2Si layer.