Abstract
The chemical nature of Si(100) surfaces during immersion in NH 4OH/H 2O 2/H 2O (SC-1) and HCl/H 2O 2/H 2O (SC-2) has been investigated in situ using confocal Raman spectroscopy. In SC-1 solution, there are two kinds of oxides at the silicon surfaces. One oxide is originated from the effect of NH 4OH, the other is associated with hydrogen and forms due to the coaction of NH 4OH and H 2O 2. In SC-2 solution, the silicon surface is covered mainly with oxides caused by H 2O 2. It has been found that a few Si–H bonds exist at the silicon surfaces in both solutions. The chemical model of the silicon surface in the solutions has been discussed in the paper.
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