Abstract

We report on the synthesis, characterization and in-situ Raman spectroscopy analysis of hydrogenation in ultrathin crystalline MoSe2 deposits. We use a controllable vapor phase synthesis method using MoSe2 powder as the only precursor, to fabricate nano- to micro-size few layer thick MoSe2 deposits with tunable number densities on SiO2/Si substrates. We employ this controllable synthesis method to correlate characteristic Raman spectroscopy response of MoSe2 at ca. 242 cm−1 (A1g) and ca. 280 cm−1 (E2g1) with the thickness of the deposits acquired from atomic force microscopy (AFM). We also use this array of well-defined atomically thin MoSe2 deposits to study possible hydrogenation effects on select architectures using in-situ Raman spectroscopy. Interestingly, our analysis indicates that ultrathin MoSe2 deposits with exposed edges show a blue shift of 1–2 cm−1 when exposed to H2 flow at 150–250 sccm for 2–4 hours in a sealed reaction cell. Exposure to Ar flow under same condition reverses the observed shift in the A1g mode of the select MoSe2 deposits. Our measurements provide in-situ evidence for hydrogen adsorption on MoSe2 deposits at room temperature and insight into the possible active sites for hydrogen reactions on layered dichalcogenides at lower dimensions.

Highlights

  • We report on the synthesis, characterization and in-situ Raman spectroscopy analysis of hydrogenation in ultrathin crystalline MoSe2 deposits

  • One of the early examples of edge reactivity was observed for hydrogen treated MoS2 nano clusters exposed to thiophene at elevated temperatures using scanning tunneling microscopy (STM)[15]

  • The analysis presented here clearly shows that hydrogenation of the MoSe2 is only present in few layer thick well defined triangular and rectangular deposits with exposed edge sites

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Summary

Introduction

We report on the synthesis, characterization and in-situ Raman spectroscopy analysis of hydrogenation in ultrathin crystalline MoSe2 deposits. We use a controllable vapor phase synthesis method using MoSe2 powder as the only precursor, to fabricate nano- to micro-size few layer thick MoSe2 deposits with tunable number densities on SiO2/Si substrates. We employ this controllable synthesis method to correlate characteristic Raman spectroscopy response of MoSe2 at ca. 280 cm−1 (E2g1) with the thickness of the deposits acquired from atomic force microscopy (AFM) We use this array of well-defined atomically thin MoSe2 deposits to study possible hydrogenation effects on select architectures using in-situ Raman spectroscopy. We use micro-Raman spectroscopy and atomic force microscopy for detailed analysis of thickness and size dependent spectroscopic response of CVD grown MoSe2. Edge site reactivity in MoS2 has been shown by electrochemical deposition and post mortem analysis, which are only evident at edge sites of the triangle shaped deposits[20,23]

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