Abstract
Reaction mechanisms in the atomic layer deposition of Al2O3 from Al(CH3)3 and water were studied with a quartz crystal microbalance at 150−350 °C and with a quadrupole mass spectrometer at 150−400 °C. The growth rate was the highest at 250 °C. At lower temperatures the growth was limited due to kinetic reasons and at higher temperatures due to lower amount of surface −OH groups. About half of the ligands were released during the Al(CH3)3 pulse and the other half during the water pulse. The reaction temperature had no marked effect on the growth mechanisms, in the temperature range studied.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
