Abstract
The universality of reflection high energy electron diffraction (RHEED) as a structural tool during film growth by molecular beam epitaxy (MBE) brings with it the possibility for in situ surface chemical analysis via spectroscopy of the accompanying inelastically scattered electrons. We have modified a serial electron energy loss spectrometer typically used on an electron microscope to work with a 30 keV RHEED-equipped MBE growth chamber in order to determine the composition of GexSi1-x alloys by reflection electron energy loss (REELS) experiments. Similar work done in transmission electron microscopes has emphasized the surface sensitivity of this technique even though these experiments have never been done under ultra-high vacuum conditions. In this work, we are primarily concerned with the accuracy with which core losses can be used to determine composition during MBE growth.
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