Abstract
In-situ pyrometric interferometry measurements were characterized for various In 0.5 Ga 0.5 P In 0.5 Al 0.5 P layered structures, including quarter-wavelength ( λ 4 ) distributed Bragg reflectors (DBR) at both 960 and 680 nm lattice matched to GaAs substrates by gas-source molecular beam epitaxy (GSMBE). Sustained quasi-sinusoidal oscillating signals were observed for the 960 nm DBR structures at a monitoring wavelength ( λ m) of 940 nm. Our results showed that pyrometric interferometry can be applied to real-time closed-loop growth of In 0.5 Ga 0.5 P In 0.5 Al 0.5 P DBR structures.
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