Abstract
Metal-Oxide-Semiconductor Capacitors (MOSCAP’s) were fabricated using Rapid Thermal Processing (RTP) techniques. MOSCAP’s that received in-situ polysilicon gate deposition after oxide growth evinced significantly tighter oxide breakdown voltage distribution as compared to devices that received ex-situ polysilicon deposition. Capacitance-Voltage (C-V) measurements of electrically unstressed and stressed devices indicate that the oxide charge, interface state density, electron trapping, and interface state generation characteristics are identical, irrespective of the mode of polysilicon gate deposition. It is concluded that, while in-situ processing may be capable of reducing particle related defects, no improvement is seen in the intrinsic properties of the oxide itself.
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