In situ probing of pulsed laser melting and laser-induced periodic surface structures formation by dynamic reflectivity

Abstract

The melting process and nanostructure formation induced by nanosecond and picosecond laser pulses on bulk silicon and copper thin film were studied by ex situ analysis and in situ real time reflectivity. Three different probing wavelengths (633, 473 and 326 nm) were used during the pump laser processing and were correlated to the beam parameters (pulse duration, laser fluence and number of laser shots) and copper thin film thickness. On a silicon surface using a KrF laser beam (27 ns, 1 Hz, 248 nm), the melting threshold was determined close to 700 mJ cm−2 and the melting duration increased from 10 to 130 ns as the fluence increased from 700 to 1750 mJ cm−2. Nanostructures with a spatial period close to the laser wavelength were formed on both copper thin film and silicon substrate after nanosecond Nd:YAG laser (10 ns, 266 nm, 1 Hz) irradiation. In the picosecond regime, using an Nd:YAG laser (40 ps, 266 nm, 1 Hz), different nanostructures, from spikes to laser-induced periodic surface structures, were formed on 500 nm copper thin film and were analyzed with respect to the drop in dynamic reflectivity changes versus the number of laser shots.