In situ physical vapor deposition of ionized Ti and TiN thin films using hollow cathode magnetron plasma source

Abstract

The in situ deposition of titanium (Ti) and titanium nitride (TiN) films for aggressive contacts [diameter 700 A/min) for both Ti and TiN. Rutherford backscattering data demonstrated that the process is truly non-nitrided, and that the Ti deposited after a TiN deposition does not contain any significant amounts of atomic nitrogen in it. In addition, TiN with low resistivity (∼30 μΩ cm for a 1000 A film) is obtained. Due to the high fractional ionization of the sputtered titanium, a bottom coverage of >30% (5:1 aspect ratio, 0.25 μm) is obtained for both Ti and TiN without application of rf bias to the wafer pedestal. Contact resistances of the liner barrier film were compared to the control films that were deposited using collimation. The HCM Ti and TiN films show lower contact...