Abstract
The black-phase formamidinium lead triiodide (α-FAPbI3) perovskite has turned out to be one of the most efficient light harvesting materials. However, the phase stability of FAPbI3 is a long-standing issue. Herein, we introduce a layer of tetrabutylammonium fluoride (TBAF) on SnO2, which would form an in situ layer of TBAPbI3 perovskitoid at the SnO2/FAPbI3 interface by interacting with PbI2. The results show that this strategy could improve the conductivity of SnO2, passivate the defects in perovskite, improve the phase stability of α-FAPbI3, and retard the nonradiative recombination in the device. As a result, we obtain a champion device with a power conversion efficiency of 23.1% under AM 1.5 G illumination of 100 mW/cm2. The unencapsulated devices can maintain excellent stability under illumination, thermal stress, and humidity conditions, respectively.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
