In situ pattern formation of GaAs by electron-beam-stimulated oxidation and subsequent Cl2 gas etching

Abstract

In situ pattern etching of GaAs in Cl2 gas was carried out by using an electron-beam (EB)-stimulated-oxidized surface layer as a patterned mask. This process bases on the experimental results that GaAs oxide layer prepared by EB irradiation under an oxygen atmosphere is resistive to Cl2 gas etching, whereas GaAs oxide layer formed without an EB can be easily etched. The resistance of the oxide mask against Cl2 gas etching varies depending on the EB dose. A fine pattern, such as a 1 μm line width in a 5 μm pitch line-and-space, is obtained.