Abstract
Abstract Here, an in situ curvature relaxation (κR) method was used to measure chemical oxygen surface exchange coefficients ( k ˜ ' s ) under well-characterized stress, temperature, and oxygen partial pressure conditions. These k ˜ ' s were measured by analyzing the transient curvature of yttria stabilized zirconia supported La0.6Sr0.4FeO3 − δ thin films reacting to oxygen partial pressure step changes. The sputtered thin film k ˜ ' s measured here were consistent with extrapolated bulk sample k ˜ ' s , but larger than those reported for pulsed laser deposited thin films. This is the first time that the curvature response of a system has been used to characterize thin film oxygen surface exchange kinetics. The simultaneous measurement of film stress and k ˜ provided by the curvature relaxation method may help explain the large k ˜ discrepancies observed in the literature.
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