In situ oxygen plasma cleaning of microswitch surfaces—comparison of Ti and graphite electrodes

Abstract

Ohmic micro- and nanoswitches are of interest for a wide variety of applications including radio frequency communications and as low power complements to transistors. In these switches, it is of paramount importance to maintain surface cleanliness in order to prevent frequent failure by tribopolymer growth. To prepare surfaces, an oxygen plasma clean is expected to be beneficial compared to a high temperature vacuum bakeout because of shorter cleaning time (<5 min compared to ~24 h) and active removal of organic contaminants. We demonstrate that sputtering of the electrode material during oxygen plasma cleaning is a critical consideration for effective cleaning of switch surfaces. With Ti electrodes, a TiOx layer forms that increases electrical contact resistance. When plasma-cleaned using graphite electrodes, the resistance of Pt-coated microswitches exhibit a long lifetime with consistently low resistance (<0.5 Ω variation over 300 million cycles) if the test chamber is refilled with ultra-high purity nitrogen and if the devices are not exposed to laboratory air. Their current–voltage characteristic is also linear at the millivolt level. This is important for nanoswitches which will be operated in that range.