Abstract
We report in situ observations of the growth of endotaxialCoSi2 nanowires on Si(110) using an ultrahigh vacuum transmission electronmicroscope with a miniature electron-beam deposition system locatedabove the pole-piece of the objective lens. Metal deposition at 750–850 °C results in formation of coherently strained silicide nanowires with a fixedlength/width (L/W) aspect ratio that depends strongly on temperature. Both dimensions evolve with time asL,W ∼ t1/3. To explain this behavior, we propose a fixed-shape growth mode based on thermallyactivated facet-dependent reactions. A second growth mode is also observed at850 °C, with dimensionsthat evolve as L ∼ t and W ∼ constant. This mode is accompanied by formation of an array of dislocations. We expect that otherendotaxial nanowire systems will follow coherently strained growth modes with similargeometrical constraints, as well as dislocated growth modes with different growth kinetics.
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