Abstract
Ultraviolet photoelectron spectroscopy (UPS) was employed to observe in situ the surface reaction during the gas source molecular beam epitaxy (GSMBE), etching, and growth and decomposition of an SiO 2 layer on high-temperature Si surfaces under a reactive gas atmosphere. In this paper, we review the in-situ UPS observation of the surface reactions during the thermal desorption of H 2, SiCl and SiO onSi(001)2 × 1. A monochromatized synchrotron radiation (SR) source, the photon energy and radiation incidence angle of which were tuned for maximizing the photon-induced hydrogen removal efficiency, was used as a probe for UPS to observe in situ the surface reactions during SR-assisted GSMBE. As a result, no probe-beam-induced disturbance of the irradiation effect occurred and probe-beam positioning within the irradiated area was not necessary. The oscillatory behavior of the surface state intensities during GSMBE enabled us to measure simultaneously the growth rate and the surface hydrogen coverage during irradiation by an SR source.
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