Abstract
In this study, the surface reconstruction of Si(001) was observed in situ by stress/strain field scanning probe microscopy (SF-SPM). This SF-SPM system includes two independent probes that can be operated as scanning tunneling microscope (STM) or atomic force microscope (AFM) freely. A special structure of the AFM probe is designed with a piezo-resistive cantilever sensor to make the probe head compact to be set in a limited space of ultrahigh-vacuum (UHV) chambers. With a low-noise direct current power source, the atomic-resolution STM and AFM images of the Si(111) and Si(001) surfaces at room temperature and high temperature were obtained. Using this system, the relationship between the reconstruction of the Si(001) surface with stress and time was investigated.
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