Abstract
Using X-ray radiography, in-situ observation of solid-liquid interface shape during silicon single crystal growth by a Czochralski method was carried out. Contrast which is attributed to the existence of solid-liquid interface has been obtained. Simulation of transmitted X-ray image by absorption calculation was carried out using absorption coefficients both for molten and for solid silicon, and supports the fact that the solid-liquid interface can be observed. Change of interface shape from convex to concave to the melt during the shouldering process was also in-situ observed.
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