Abstract
Surface melting of Si(001) surface has been investigated by x-ray reflectivity up to the bulk melting temperature: Tm;b. An in situ system was designed for measurements of x-ray reflectivity at high temperatures under an atmosphere of He-gas flow. It has been shown that the surface density changes at T=Tm;s*<Tm;b−110 K. This change was observed at T=Tm;s* both on cooling and heating (a reversible phenomenon). The density of the near-surface at Tm;b>T>Tm;s*, which is larger than that of the bulk solid, is 2.5(1)×103 kg/m3 which is almost the same as that of the bulk liquid, though a macroscopic melting does not occur. This reversible phenomenon indicates the surface melting at T=Tm;s*.
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