Abstract
Ions (C +, N 2 + and O +) implantation into evaporated Ti films was performed in the transmission electron microscope (TEM). Ti films grown on NaCl (0 0 1) surfaces at room temperature consisted mainly of (0 3 · 5)-oriented hcp-Ti and (1 1 0)-oriented CaF 2-type TiH x . NaCl-type Ti compounds of (0 0 1)-oriented TiC z , TiN y and TiO u were epitaxially formed by the transformation of (0 3 · 5)-oriented hcp-Ti to (0 0 1)-oriented fcc-Ti sublattices and the occupation of the octahedral (O-) sites by implanted ions, whereas (1 1 0)-oriented Ti compounds were formed from a (1 1 0)-oriented TiH x without structural transformation of Ti sublattices. Observations of EELS elucidated that, in the early N-implanting stage, the variation of the energy of the loss peak due to plasmon excitation of the areas where TiH x grew in the as-evaporated Ti films was different from that of the areas where hcp-Ti grew. Analysis of Mulliken bond overlap populations indicated that the occupation of O-sites by N atoms gives rise to weakening of Ti–Ti bonds and forming of Ti–N covalent bonds.
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