Abstract
A focused ion beam (FIB) interface attached to a column of a 200 keV transmission electron microscope (TEM) was used to perform in-situ micropatterning to semiconductors and insulators. TEM specimens of GaAs, Si, α-SiO2 and 6H-SiC were micromilled in the TEM during observation. Several figures were patterned with a 25 keV Ga+ FIB of 0.2 µm beam diameter at room temperature. The effect of FIB irradiation on the structural changes was observed simultaneously using a TV-rate video camera and sequentially using regular films. FIB micropatterning caused polycrystallization, amorphization and Ga injection. The excess Ga in the specimens of GaAs precipitated as liquid or amorphus particles of 0.2 µm in diameter due to the selective etching of As. That in Si, SiO2 and SiC, on the other hand, precipitated as small Ga dots of 1 to 10 nm in diameter, because of the low solubility of Ga in these materials.
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