In‐situ observation of chemical vapor deposition using SiHCl3 and BCl3 gases

Abstract

AbstractThe lowest temperature for initiating the film deposition was evaluated by in situ monitoring using a highly sensitive langasite crystal microbalance (LCM) in order to produce a thin boron doped silicon film using trichlorosilane gas and boron trichloride gas at low temperatures. The thin films of silicon, boron and boron‐doped silicon were individually formed from the trichlorosilane gas, boron trichloride gas and their gas mixture, respectively, on the LCM. The silicon film deposition occurred between 570 and 600 °C, while the boron film deposition occurred between 470 and 530 °C. The film deposition from both gases occurred at temperatures higher than 530 °C. Based on secondary ion mass spectrometry measurements, the boron‐doped silicon film was determined to be formed on the silicon substrate at 570 °C. Thus, the LCM could be useful for developing a thin film formation process including that for doping. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)