Abstract
The size dependence of Young’s modulus and the critical pressure for phase transformation from the diamond structure at ambient pressure to a metallic β-Sn structure at high pressure was studied in a Si phononic crystal. We used dynamic mechanical analysis and in situ electrical characterization with an electrically conducting diamond nanoindentation tip. Experiments on several phononic periodic sizes enabled us to establish that the Young’s modulus and critical phase-transformation pressure decreased as the neck width (periodic structure) of the phononic crystal shrank. The finding enables us to understand the reduction in the thermal conductivity of the Si phononic crystal at the local neck between the nanoholes.
Highlights
The Si phononic crystals (PnCs) sample was fabricated on a SOI wafer, which was prepared by separation by implantation of oxygen with a thickness t = 100 nm in single-crystal Si (100) in the top layer and with a thickness t = 3000 nm in the SiO2 buried-oxide (BOX) layer in the middle
We focused on the mechanical properties, especially on the phase transformation from the diamond structure at ambient pressure to a metallic β-Sn structure at high pressure,[8–19] and report the dependence of critical pressure on the structural size of single-crystal
The indentation load P and penetration depth h were controlled to less than 50 μN and 15 nm, respectively, and basic techniques such as the calculation method for the tip radius of curvature R were based on previous studies.[21–34]
Summary
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