Abstract
Surface reactions in Si VPE using the SiH 2Cl 2/H 2 gas system were studied using the surface photo-absorption (SPA) method. when SiH 2Cl 2 was supplied, the intensity of the SPA signal increased, due to the absorbate SiCl 2 on the Si(100) surface. After the source gas injection was stopped, the signal intensity decreased, corresponding to the CI atoms desorption from the surface. By studying the time constant and the activation energy for this desorption process are found; one is desorption of the absorbate SiCl 2 itself, and the activation energy for this reaction is estimated to be 21 kcal/mol. The other is the reaction of absorbed SiCl 2 with gaseous H 2, and its activation energy is calculated to be 73 kcal/mol.
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