Abstract
We report an in situ transmission electron microscopy (TEM) study of nanocavity evolution in amorphous Si (a-Si) under ion beam irradiation. The size evolution of the nanocavities was monitored during ion irradiation with Si or As at various temperatures between 300 and 600 K. A linear decrease of the nanocavity diameter was found as the ion fluence increased; it was much faster than its counterpart in crystalline Si (c-Si). Here, the shrinkage rate depended on the irradiation-induced atomic displacement rate. No significant temperature dependence was observed, confirming that the irradiation-induced nanocavity shrinkage in a-Si is essentially due to ballistic interactions, i.e., differs radically from that in c-Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
