Abstract
Terraces, steps and growth islands on the surfaces of MBE heteroepitaxial AlGaAs and NiAl on GaAs are observed by an MBE-STM hybrid system. The nucleation-and-growth model was confirmed and multi-layer growth process was revealed on AlGaAs. Extended terraces and trenches between the terraces were revealed on NiAl, the latter being undetected by conventional reflection high energy electron diffraction (RHEED). A UHV high-resolution (HR) SEM was modified to perform real-time observation of GaAs MBE growth. Monolayer steps and 10 nm wide growth islands are observed during growth.
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