Abstract
In situ Fourier transform infrared (FT-IR) measurement has been performed in a metal-organic chemical vapor deposition (MOCVD) technique using a source material which is solid at room temperature. First, methods to introduce purge gas into a CVD reactor to prevent raw materials and thermally decomposed products from depositing onto the KBr windows were examined. We were able to separate spectra of gaseous pure source materials and those of species adhered on the KBr windows under the optimum flow rate of purge gas. Then, in situ IR spectra of Cu(DPM)2 were measured in detail in the CVD reactor. The results of measured spectra showed that no change of the chelate carbonyl region occurred, and that two new peaks appeared, of which intensities increased with the increase of the substrate temperature. The dependence corresponded well to the change of the atomic composition in the films deposited on SiO2.
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