Abstract
Scanning probe microscopies have been used to characterize the variations in local electric fields near individual grain boundaries in TiO2. In-situ measurements of electric field gradients across a grain boundary with a lateral in-plane applied bias were made with atomic force microscopy. The dependence of field variations near the boundaries on applied voltage has been quantified and compared with theory. The effects of measured enhancement due to variations in cantilever deflection are considered explicitly.
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