In situ Load- Pull MMIC for Large-Signal Characterization of mHEMT Devices at Submillimeter- Wave Frequencies

Laurenz John,Sandrine Wagner,Thomas Zwick,Christian Friesicke,Axel Tessmann,Arnulf Leuther,Matthias Ohlrogge

doi:10.1109/mwsym.2018.8439391

In situ Load- Pull MMIC for Large-Signal Characterization of mHEMT Devices at Submillimeter- Wave Frequencies

Laurenz John, Sandrine Wagner + Show 5 more

https://doi.org/10.1109/mwsym.2018.8439391

Copy DOI

Publication Date: Jun 1, 2018

Citations: 8

Affiliation: Fraunhofer Institute for Applied Solid State Physics, Karlsruhe Institute of Technology

#Tunable Output Matching Network #Sub-mm Wave Frequencies + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

An in situ load-pull MMIC with preamplifier and tunable output matching network in a 35 nm InAlAs/InGaAs technology is presented in this paper. The load impedance tuning is realized using an open-circuit stub network with shunt-FETs. The tunable load impedance range and the large-signal characterization of a 2×15 μm device is demonstrated at 300 GHz. With this MMIC the unique characterization and large-signal model validation of mHEMT devices at sub-mm wave frequencies is possible. The total chip area required for large-signal characterization of a single device is 1850 μm × 400 μm.

Full Text