In situ lateral patterning of thin films of various materials deposited by physical vapor deposition

Abstract

An approach to pattern directly thin films of various materials deposited by different physical vapor deposition methods is presented. Co and Ag films deposited by pulsed laser deposition and e-beam evaporation, respectively, were fabricated into 650- and 1000-nm-spaced parallel stripes on Si(100) surfaces by simultaneous two-beam ultraviolet laser interference irradiation of the substrate surface during deposition. The resulting morphology consists of 1- to 2-nm-height stripes, which have the same direction and spacing as the interference fringes. This approach has the potential to allow long-range ordering of well-defined patterns over large areas because the spacing and geometrical patterns are defined by the laser interference. Furthermore, the fact that this method works for different materials and does not require any lithography masks, etching steps, or substrate prepatterning, makes it promising as a simple and economical lateral patterning approach.