Abstract
We present two new experimental arrangements designed to study time dependent processes during the irradiation of semiconductor detectors using ion microbeams. The first one is based on an upgraded pulsed beam irradiation setup of the RBI heavy ion microprobe. Controlled time-sequences of sample irradiation and intermediate IBIC probing is used to study dynamics of degradation of charge transport in detectors at different time scales. The second experimental arrangement is a dual ion microbeam irradiation setup that can accept simultaneously the ion beams from the two accelerators. In that case the first ion microbeam may be used as a damaging beam while the second one could be used as a probing beam. Probing techniques that have been used to study induced changes in crystalline materials are based on low microbeam currents and include STIM channeling, IBIC and IL.
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