Abstract
Design of precursors for thin film growth by chemical vapor deposition (CVD) can be informed by knowledge of the precursor decomposition mechanism. However, the vast majority of decomposition characterization is done by techniques that do not capture CVD conditions. This work used a custom CVD reactor with in situ Raman spectroscopy capabilities to investigate the gas phase thermal decomposition of the tungsten imido complex Cl4(CH3CN)WNiPr, a known precursor for the aerosol‐assisted (AA)CVD of tungsten carbonitride thin films. In combination with previous computational and ex situ data, we propose a decomposition mechanism for this precursor under CVD conditions, based on observation of gas phase products of N(imido)‐C bond homolysis and σ‐bond metathesis between the precursor W–Cl bond and H2.
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