Abstract
Mechanisms of atomic layer deposition (ALD) growth of lanthanum oxide on H-terminated Si(111) using lanthanum tris(N,N′-diisopropylacetamidinate) (La(iPr-MeAMD)3) are investigated using infrared (I...
Highlights
Atomic layer deposition (ALD) of a variety of thin film materials is being thoroughly investigated because of the thickness and composition control and uniformity that it provides, even on structured substrates.[1]
First-principles calculations based on density functional theory (DFT) are carried out to aid in the interpretation of infrared (IR) features of the intact La precursor with three amidinate ligands (LaL3) and of an isolated amidine, where L represents a ligand
Gas phase species in the ALD reactor are first investigated to determine the state of the precursor prior to reaching the sample
Summary
Atomic layer deposition (ALD) of a variety of thin film materials is being thoroughly investigated because of the thickness and composition control and uniformity that it provides, even on structured substrates.[1]. Because they have no M-C bonds, carbon incorporation into the films may be suppressed, and the relatively reactive M-N bonds make low-temperature deposition possible Their steric and electronic properties can be tailored through variations of C- and N-substituents.[8] Amidinate ligands are known to enhance the thermodynamic stability of their complexes due to the chelating effect of the bidentate ligands.[9,10] Some transition metals, such as Cu, Co, Fe, Ru, Mn, and Ni, as well as their nitrides and oxides and rare earth oxides have been successfully grown by ALD from the corresponding amidinate precursors.[7,11,12,13,14,15,16] the surface chemistry of these relatively new precursors has not yet been investigated in situ, because most studies to-date have focused on ex situ film characterization by electrical, physical, or chemical measurements. A similar precursor, lanthanum tris(N,N′-diisopropylformamidinate) is slightly more volatile and is expected to have surface chemistry similar to that of the precursor that we studied.[22]
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