Abstract
Abstract Reactions at solid-solid interfaces are important both scientifically and technologically. Firstly, there is quite a wide variety of possibilities. Materials can react with one another, forming equilibrium, meta-stable or even amorphous phases. The interface can provide a means to promote phase reactions kinetically, in an analogous manner to catalysis. Even when the materials are mutually compatible chemically, the interface topography and atomic structure can evolve over the course of time. From the practical point-of-view, changes in the interface chemistry and structure can profoundly alter the physical properties. This is especially notable in thin film technology, whereby the interfaces constitute a signigicant proportion of the whole device. In this article, contributions to understanding this field are illustrated through application of in situ and high-resolution electron microscopy (HREM). Basic studies of metal-semicoductor interfacial reactions have been successfully carried out for a number of years. of increasing importance in microelectronics is the stability of layers which prevent chemical interaction, namely the diffusion barriers.
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