In situ high-temperature synchrotron-radiation diffraction studies of Ni and Co–Ni silicidation processes

Abstract

Silicidation processes in nanoscale Ni and CoNi (5at.% Ni) layers on different silicon substrates were investigated using X-ray diffraction. The phase formation sequences as well as the formation and transition temperatures between 200 and 750 °C were studied. The impact of different silicon substrates, i.e., polycrystalline Si and (100) oriented Si single-crystal substrates as well as the impact of different species of dopants (As, P) were analysed. The thermal range of the desired low resistance target phases NiSi and Co 0.95Ni 0.05Si 2 was determined. The temperatures for phase formation and phase transitions are significantly lowered on polycrystalline Silicon substrates.