In situ high-temperature scanning tunneling microscopy study of bilayer graphene growth on 6H-SiC(0001)

Abstract

Using in situ high-temperature (1395K), ultra-high vacuum, scanning tunneling microscopy (STM), we investigated the growth of bilayer graphene on 6H-SiC(0001). From the STM images, we measured areal coverages of SiC and graphene as a function of annealing time and found that graphene grows at the expense of SiC. Graphene domains were observed to grow, at comparable rates, at (I) graphene-free SiC step edges, (II) graphene–SiC interfaces, and (III) the existing graphene domain edges. Based upon our results, we suggest that the rate-limiting step controlling bilayer graphene growth is the desorption of Si from the substrate.