In Situ Growth of PbS/PbI2 Heterojunction and Its Photoelectric Properties.

Abstract

In this paper, PbI2 thin films with a uniform surface morphology and compact structure were prepared by adjusting the spin coating process parameters. On such a basis, the PbS/PbI2 heterojunction was fabricated on the PbI2 surface by the method of in situ chemical replacement growth. The results show that the PbS/PbI2 heterojunction grown by this method has a clear interface and is closely combined. The introduction of a PbS layer enables its spectral response range to cover the visible and near-infrared regions. Compared with the PbI2 thin film device, its responsivity is increased by three orders of magnitude, its response time reduced by 42%, and its recovery time decreased by nearly 1/2 under 450 nm illumination. In the case that there is no response for the PbI2 thin film device under 980 nm illumination, the specific detectivity of the PbS/PbI2 heterojunction device still amounts to 1.8 × 108 Jones. This indicates that the in situ chemical replacement is a technique that can construct a high-quality heterojunction in a simple process. PbS/PbI2 heterojunction fabricated by this method has a visible–near-infrared light detection response range, which provides a new idea for creating visible–near-infrared common-path detection systems.