In situ growth MoS2 quantum dots as promising interface materials for silicon solar cells

Abstract

The carrier selectivity at interface is one key factor to improve the performance of silicon solar cells. Here, Molybdenum disulfide (MoS2) quantum dots were successfully synthesized by one-step in situ plasma enhanced atom layer deposition. A transmission electron microscope was employed to investigate nano-size scaled as well as growth mechanism of the crystalline MoS2 quantum dots. MoS2 quantum dots with additional molybdenum-oxygen (Mo–O) bonding were prepared by co-reactant plasma processing, which exhibited photo-generated carrier selectivity as promising interface materials for silicon heterojunction solar cells. Our results indicated their carrier selectivity of electron-blocking and hole-transporting at interface was attributable to unique quantum effects and tunneling effects. A photovoltaic conversion efficiency 23% was achieved by a sample silicon solar cell combined with MoS2 quantum dots interface materials. Because the interface engineering is well-defined, and the synthesis is low-cost, this bottom-up strategy provides a potential advance in design and construction of innovative and highly efficient photovoltaic devices.