Abstract

With the increasing packaging density and multi-functionality, thermal management and electromagnetic pollution in electronic devices are crucial. In this work, we propose a novel method to in-situ grow hollow Fe3O4 sphere (h-Fe3O4, inner and outer diameter of 870 nm and 975 nm, respectively) onto three-dimensional graphene foam (GF) surface and then filled it with polydimethylsiloxane (PDMS) to fabricate nanocomposites with high electromagnetic interference shielding effectiveness (70.37 dB from 8.2 to 12.4 GHz) and thermal conductivity (28.12 ± 1.212 W m−1 K−1) at room temperature. Moreover, conductive networks inside composites show super-flexible performance with high electrical conductivity (84.02 ± 8.385 S cm−1). The effect of in-situ growth hollow Fe3O4 spheres in the enhancement of EMI SE has been demonstrated via comparing with different contents, morphologies and preparation processing. Besides, the mechanism of thermal conductivity has been investigated by FEM simulation and theoretical modeling. Finally, the usage of GF/h-Fe3O4/PDMS composites as thermal interface materials (TIMs) for chip cooling is proved to be successful, and the corresponding temperature under usage power density is accurately predicted. These comprehensive properties of GF/h-Fe3O4/PDMS composite open a potential application for next-generation TIMs in chip packaging.

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