Abstract
In this work the growth of crystallographically oriented pores in n type InP is studied. The evolution of the pore structure with time is outlined in detail. It is found that growth and branching of these pores in different crystallographic directions depend on the etching time. Besides an ex-situ evaluation of the pore structure by micros-copy, in-situ FFT impedance spectroscopy measurements have been performed. A model has been found which fits the data consistently. First steps towards a physico-chemical understanding of the processes underlying the pore growth have been made, yielding a qualitative view of pore growth.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
