In situ epitaxial growth of YBCO films by facing targets sputtering method

Abstract

Superconducting YBa 2Cu 3O x (here after we call it as “123”) films were prepared on SrTiO 3(110) substrates by the facing targets sputtering (FTS) method. “123” films having T c 0=84−86K could be epitaxially grown from “123” stoichiometric oxide targets under the condition of very low O 2 partial pressure; P O 2= 1mTorr. Furthermore, no post-deposition treatment was needed, such as in situ low temperature annealing or slow cooling in O 2 atmosphere. The real part of ac susceptibility changed rapidly and smoothly and its imaginary part showed a single sharp peak. These results indicate that uniform and high quality epitaxial films could be grown at the just-deposited state by this method.