Abstract
The initial process of bias-enhanced nucleation (BEN) of diamond on Si substrate was investigated by the in-situ single wavelength ellipsometry method using hot filament chemical vapor deposition. The results show that the BEN process includes four basic stages: (i) carburization; (ii) etching; (iii) incubation; and (iv) nucleation and development of diamond nuclei. The biasing time is shown to have a very important effect on oriented nucleation. The oriented nucleation occurs in the initial nucleation stage of BEN. It has been established by X-ray photoelectron spectroscopy analysis that the bonding energies of the sp2 carbon and the SiC vary with the biasing time. It has been proposed that the SiC is unnecessary in BEN.
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