Abstract
In situ ellipsometry was used to study the initial growth of ZnS thin films deposited by RF magnetron sputtering, via the variations of the ellipsometric constants Δ and ψ. We found that the growth curves, Δ versus ψ curves measured in real time, followed the closed trajectories with a well-defined thickness period, and also that they were reproducible even at the very beginning of film growth under the given deposition conditions. From the inversion analysis of the ellipsometric constants, we were able to determine not only the thickness and the refractive index of the growing film, but also the threshold thickness at which bulklike film growth started and the corresponding bulklike refractive index. Moreover, it was confirmed that ZnS thin film growth was governed by an islandlike growth mechanism, not by the layer-by-layer growth mechanism. Finally, an empirical function, to which the thickness-dependent variation of the refractive index was fitted, was introduced.
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