Abstract
Anodic film formation on the layered semiconductors Bi 2Te 3 and GaSe in a neutral solution of sodium borate in ethylene glycol is studied under constant current condition. It is found from in situ ellipsometric measurements that anodic films of the same characteristics grow in each layer of Bi 2Te 3, whereas different kinds of films grow in three stages during the initial phase of anodization of GaSe.
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