Abstract
The growth of polycrystalline silicon thin films fabricated from fluorinated precursors SiFnHm (n+m≤3) on SiO 2 substrates was examined in detail by real time ellipsometry. The volume fraction of crystal in the film was within 50 vol.% on the average when it was grown continuously on glass. A low density amorphous layer of 300Å thick was formed in the early stage of the growth. The crystallinity, however, was improved with an increase in accumulated film thickness. The layer-by-layer technique of alternating the deposition of very thin film and the exposure to hydrogen plasma was effective on the promotion of crystallization. Optimal conditions of both the deposition and hydrogen plasma treatments were also established by in situ ellipsometry.
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