Abstract
In situ real time ellipsometry has been applied to control and monitor GaAs exposure to H 2, O 2 and N 2 plasmas for the processes of native oxide removal, oxidation and nitridation, respectively. Single wavelength ellipsometry is suitable for detecting the cleaning end-point and for defining the optimal cleaning conditions, whereas both single wavelength and spectroscopic ellipsometry measurements are needed to elucidate the chemistry and kinetics of the GaAs plasma oxidation and nitridation. In particular, the anisotropic UV photoenhancement of the GaAs oxidation rate in the initial stage (<300 Å) and the different chemistry and morphology of GaN layers obtained by GaAs nitridation with N 2, N 2–H 2 and N 2–NH 3 plasmas are highlighted.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
