In situ electron beam irradiation induced in-plane orientation of europium thin film grown by the molecular beam epitaxy technique

Abstract

Europium thin films were grown on various substrates by the molecular-beam epitaxy technique. X-ray diffraction and in situ reflection high-energy electron diffraction observations revealed that the europium thin films possessed a textured structure with Eu(110) planes which were self oriented parallel to the substrate, independent of the type of substrate. In situ electron-beam irradiation induced transformation of the textured Eu(100) plane to the [111] in-plane orientation. Thus, using this method europium thin films could be locally crystallized to a single phase at growth temperatures above 170 K. It was found necessary to use electron-beam irradiation during the initial growth stage in order to obtain the in-plane orientation.