Abstract
AbstractUnpassivated 2.1 μm wide Al-4wt%Cu interconnects with near-bamboo grain structure, are electromigration-tested to failure in-situ in transmission electron microscopy. Early stress-induced voids stop growing and are not fatal. Hillocking is associated with precipitates, fatal voiding with copper depletion. Electromigration-induced voids form at the upstream end of inclined grain boundaries. Healing events are analysed and it is shown that open-circuit failure can occur when the proximity of grain boundaries impairs the stress-driven healing.
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