In Situ Electrochemical Behavior of Aluminum Chemical Mechanical Polishing at Low Down Pressure in Environmentally Friendly and Weakly Alkaline Slurry

Abstract

The lower pressure tendency in chemical mechanical polishing (CMP) process requires a lower adhesive inhibitor with environmentally friendly corrosion properties to replace the conventional benzotriazole (BTA) inhibitor for aluminum (Al) CMP. Open circuit potential test, potentiodynamic polarization curve test, linear sweep voltammetry and potential drop investigated by in-situ electrochemical mechanical polishing (ECMP) platform were used to reveal the controlled evolution process of corrosion inhibitor films at low pressure during Al CMP. The comparison between BTA and 1,2,4-triazole (TAZ) shows that TAZ has lower current density, wider potential inhibition interval, and high planarization efficiency, although TAZ has lower adhesion on Al surface. Finally, the surface roughness of Al after CMP with TAZ in weakly alkaline slurry at pressure of 1 psi was observed by atomic force microscopy (AFM) with a value of 0.19 nm. This studies demonstrated that the conventional BTA can be replaced by environmentally friendly corrosion inhibitor TAZ, which is a promising alternative candidate to the Al CMP at low down pressure.